Quantum Dots and Dislocations: Dynamics of Materials Defects


MR14 - Centre for Mathematical Sciences
Cambridge, United Kingdom

Thursday, 01 December 2016
from 15:00 to 16:00

Irene Fonseca
Carnegie Mellon University
The formation and assembly patterns of quantum dots have a significant impact on the optoelectronic properties of semiconductors. We will address short time existence for a surface diffusion evolution equation with curvature regularization in the context of epitaxially strained three-dimensional films. We will discuss optimal faceted shapes of quantum dots and wetting in the case in which there are a non-vanishing crystallographic miscut and a lattice incompatibility between the film and the substrate. The nucleation of misfit dislocations will be analyzed.
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